N-Channel Power MOSFET, 800V Vdss, 8A continuous drain current, and 650mΩ on-state resistance. Features include a 20V gate-source voltage, 40W power dissipation, and a TO-220AB package for through-hole mounting. This silicon, metal-oxide semiconductor FET offers fast switching with a 25ns turn-on delay and 7ns fall time. It operates across a wide temperature range from -55°C to 150°C and is RoHS compliant and halogen-free.
Current Rating8A
MountingThrough Hole
Power40W
Quick Jump:
Technical Specifications
Infineon SPA08N80C3XKSA1 technical specifications.
General
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| On-State Resistance | 650mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPA08N80C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPA08N80C3XKSA1 to view detailed technical specifications.
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