
N-channel power MOSFET with 600V drain-source breakdown voltage and 11A continuous drain current. Features 440mΩ drain-source resistance (Rds On Max) and 33W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with a 7ns fall time. Packaged in a TO-220-3 through-hole configuration, this RoHS compliant component is designed for demanding power applications.
Infineon SPA11N60CFD technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 440mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 600V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 33W |
| Radiation Hardening | No |
| Rds On Max | 440mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 34ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPA11N60CFD to view detailed technical specifications.
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