N-Channel Power MOSFET featuring 800V drain-source voltage and 11A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.45ohm Rds On resistance and 1.6nF input capacitance. Designed for high-power applications, it operates within a -55°C to 150°C temperature range and boasts fast switching times with a 7ns fall time. Available in TO-220AB and TO-220FP packages, this RoHS and Halogen Free component is ideal for demanding power conversion circuits.
PackageTO-220-3
Voltage800V
Current11A
Current Rating11A
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Technical Specifications
Infineon SPA11N80C3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Current | 11A |
| Current Rating | 11A |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.83mm |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Length | 10.65mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Rds On Max | 450mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| Voltage | 800V |
| DC Rated Voltage | 800V |
| Width | 4.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPA11N80C3 Datasheet
Download the complete datasheet for Infineon SPA11N80C3 to view detailed technical specifications.
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