
N-channel power MOSFET with 650V drain-source breakdown voltage and 15A continuous drain current. Features low 280mΩ on-state resistance and 34W power dissipation. Operates from -55°C to 150°C with a 20V gate-source voltage rating. Packaged in a TO-220AB through-hole configuration, this RoHS compliant component offers fast switching with a 11ns fall time.
Infineon SPA15N65C3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 650V |
| Dual Supply Voltage | 650V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34W |
| Nominal Vgs | 3V |
| On-State Resistance | 280mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 34W |
| Rds On Max | 280mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 32ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPA15N65C3 to view detailed technical specifications.
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