N-Channel Power MOSFET featuring 560V drain-source voltage and 16A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 280mΩ at 10Vgs. With a maximum power dissipation of 34W and a threshold voltage of 3V, it operates across a wide temperature range from -55°C to 150°C. The component is supplied in a TO-220-3 package and is RoHS compliant.
PackageTO-220-3
Voltage560V
Current16A
Current Rating16A
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Technical Specifications
Infineon SPA16N50C3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 16A |
| Current | 16A |
| Current Rating | 16A |
| Drain to Source Voltage (Vdss) | 560V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 34W |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
| Voltage | 560V |
| DC Rated Voltage | 560V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPA16N50C3 Datasheet
Download the complete datasheet for Infineon SPA16N50C3 to view detailed technical specifications.
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