N-Channel Power MOSFET featuring 600V drain-source voltage and 20.7A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 190mΩ (max) and 160mΩ (typ). Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 34.5W. The component is RoHS compliant and halogen-free.
PackageTO-220-3
Current Rating20.7A
MountingThrough Hole
Power34.5W
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Technical Specifications
Infineon SPA20N60C3XKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 20.7A |
| Current Rating | 20.7A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| On-State Resistance | 190mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 34.5W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| DC Rated Voltage | 650V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPA20N60C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPA20N60C3XKSA1 to view detailed technical specifications.
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