N-channel power MOSFET featuring 600V drain-source breakdown voltage and 20.7A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 220mΩ drain-source resistance and 35W power dissipation. It operates within a -55°C to 150°C temperature range and includes fast switching characteristics with a 6.4ns fall time. Packaged in a TO-220-3 through-hole configuration, this RoHS compliant component is ideal for high-voltage applications.
PackageTO-220-3
PolarityN-CHANNEL
Power35W
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Technical Specifications
Infineon SPA20N60CFDXKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 20.7A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 600V |
| Fall Time | 6.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Nominal Vgs | 4V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 59ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPA20N60CFDXKSA1 Datasheet
Download the complete datasheet for Infineon SPA20N60CFDXKSA1 to view detailed technical specifications.
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