N-Channel Power MOSFET featuring 650V drain-source voltage and 20.7A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 190mΩ Rds On and 4.5ns fall time. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 150°C with a maximum power dissipation of 34.5W. The component is RoHS compliant and halogen-free.
PackageTO-220-3
Current Rating20.7A
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Technical Specifications
Infineon SPA20N65C3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 20.7A |
| Current Rating | 20.7A |
| Drain to Source Voltage (Vdss) | 650V |
| Dual Supply Voltage | 650V |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34.5W |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 650V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPA20N65C3 Datasheet
Download the complete datasheet for Infineon SPA20N65C3 to view detailed technical specifications.
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