SPB02N60S5

Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

PackageTO-263-3

Current Rating1.8A

PolarityN-CHANNEL

Power25W

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Infineon SPB02N60S5 technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	1.8A
Current Rating	1.8A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	3R
Fall Time	20ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	240pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	25W
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	25W
Rds On Max	3R
RoHS Compliant	Yes
Series	CoolMOS™
Turn-Off Delay Time	35ns
DC Rated Voltage	600V