N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 4.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.95 ohm Rds On and 50W maximum power dissipation. Packaged in a TO-263-3 surface-mount plastic case, it operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 10ns turn-on delay and 10ns fall time.
PackageTO-263-3
Current Rating4.5A
PolarityN-CHANNEL
Power50W
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Technical Specifications
Infineon SPB04N50C3 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 560V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 470pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 560V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPB04N50C3 Datasheet
Download the complete datasheet for Infineon SPB04N50C3 to view detailed technical specifications.
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