N-channel power MOSFET featuring 600V drain-source breakdown voltage and 4.5A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.95ohm drain-source resistance and 50W maximum power dissipation. Designed for efficient switching, it exhibits a 6ns turn-on delay and 9.5ns fall time. Packaged in a TO-263-3 surface-mount plastic package, this component is RoHS and Halogen free, with a maximum operating temperature of 150°C.
PackageTO-263-3
Current Rating4.5A
PolarityN-CHANNEL
Power50W
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Technical Specifications
Infineon SPB04N60C3 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 950mR |
| Fall Time | 9.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 950mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 58.5ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 650V |
| Width | 9.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPB04N60C3 Datasheet
Download the complete datasheet for Infineon SPB04N60C3 to view detailed technical specifications.
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