Infineon
SPB04N60C3E3045A
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
PackageTO-263
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Technical Specifications
Infineon SPB04N60C3E3045A technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 600V |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon SPB04N60C3E3045A Datasheet
Download the complete datasheet for Infineon SPB04N60C3E3045A to view detailed technical specifications.
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