
The SPB100N03S2-03G is a 30V N-CHANNEL MOSFET with a continuous drain current rating of 100A and a maximum power dissipation of 300W. It features a TO-263-3 package and is designed for surface mount applications. The device operates over a temperature range of -55°C to 175°C and is compliant with lead-free and RoHS regulations. The MOSFET has an input capacitance of 7.02nF and a drain to source resistance of 3.3mR.
Infineon SPB100N03S2-03G technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 100A |
| Current Rating | 100A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.02nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 44ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPB100N03S2-03G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
