N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 380mΩ Rds On and 125W power dissipation. Designed for efficient switching, it exhibits a 130ns turn-on delay and 20ns fall time. Packaged in a TO-263-3 surface-mount plastic package, this RoHS and Halogen Free component operates from -55°C to 150°C.
PackageTO-263-3
Current Rating11A
PolarityN-CHANNEL
Power125W
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Technical Specifications
Infineon SPB11N60S5 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.46nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 130ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPB11N60S5 Datasheet
Download the complete datasheet for Infineon SPB11N60S5 to view detailed technical specifications.
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