N-channel power MOSFET featuring 800V drain-source breakdown voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 290mΩ drain-to-source resistance. Designed for surface-mount applications, it operates within a -55°C to 150°C temperature range and boasts a maximum power dissipation of 227W. The component is ROHS compliant and supplied on tape and reel.
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| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 800V |
| Dual Supply Voltage | 800V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 2.3nF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 227W |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Rds On Max | 290mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 800V |
| Width | 9.45mm |
| RoHS | Compliant |
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