N-Channel Power MOSFET featuring 650V drain-source voltage and 20.7A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 190mΩ and a maximum power dissipation of 208W. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-263-3 surface-mount package. Key switching characteristics include a 10ns turn-on delay and 67ns turn-off delay, with a fall time of 4.5ns.
PackageTO-263-3
Voltage600V
Current20A
Current Rating20.7A
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Technical Specifications
Infineon SPB20N60C3 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 20.7A |
| Current | 20A |
| Current Rating | 20.7A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.4nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 10ns |
| Voltage | 600V |
| DC Rated Voltage | 650V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPB20N60C3 Datasheet
Download the complete datasheet for Infineon SPB20N60C3 to view detailed technical specifications.
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