N-channel Power MOSFET featuring 600V drain-source voltage and 20.7A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low on-resistance of 0.19 ohms. Designed with a single element and four terminals, it operates up to a maximum temperature of 150°C. The component is housed in a TO-263AB green plastic package.
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Technical Specifications
Infineon SPB20N60C3ATMA1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Pin Count | 4 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | No |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon SPB20N60C3ATMA1 Datasheet
Download the complete datasheet for Infineon SPB20N60C3ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.