N-Channel Power MOSFET featuring 560V drain-source voltage and 21A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low Rds(on) of 190mΩ at 10V gate-source voltage. Designed for high-power applications, it boasts a maximum power dissipation of 208W and operates within a temperature range of -55°C to 150°C. Packaged in a TO-263-3 surface-mount package, this component is halogen-free, lead-free, and RoHS compliant.
PackageTO-263-3
Current Rating21A
Power208W
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Technical Specifications
Infineon SPB21N50C3 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Voltage (Vdss) | 560V |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 208W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 560V |
| Width | 9.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPB21N50C3 Datasheet
Download the complete datasheet for Infineon SPB21N50C3 to view detailed technical specifications.
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