The SPB35N10T is a 100V 35A SIPMOS transistor packaged in a TO-263-3. It has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. The transistor is lead free and has a maximum power dissipation of 150W. It is designed for surface mount applications and has a maximum Rds On of 44mR.
PackageTO-263-3
Current Rating35A
MountingSurface Mount
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Technical Specifications
Infineon SPB35N10T technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 35A |
| Current Rating | 35A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 1.57nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Rds On Max | 44mR |
| Series | SIPMOS® |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPB35N10T Datasheet
Download the complete datasheet for Infineon SPB35N10T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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