N-channel power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. Surface mount TO-263-3 package offers low 3.4mΩ drain-source resistance at 10V Vgs. Designed for high power applications with 300W maximum power dissipation and an operating temperature range of -55°C to 175°C. Fast switching characteristics include 22ns turn-on delay and 90ns turn-off delay.
PackageTO-263-3
Current Rating80A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon SPB80N03S2-03G technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.02nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 3.1mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon SPB80N03S2-03G Datasheet
Download the complete datasheet for Infineon SPB80N03S2-03G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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