Infineon
SPD02N50C3
Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
PackageTO-252-3
Current Rating1.8A
PolarityN-CHANNEL
Power25W
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Technical Specifications
Infineon SPD02N50C3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.8A
Current Rating
1.8A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
560V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
190pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
25W
Rds On Max
3R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
70ns
DC Rated Voltage
560V
Compliance
RoHS
Compliant
Datasheet
Infineon SPD02N50C3 Datasheet
Download the complete datasheet for Infineon SPD02N50C3 to view detailed technical specifications.
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