Infineon
SPD02N50C3BTMA1
Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
MountingSurface Mount
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Technical Specifications
Infineon SPD02N50C3BTMA1 technical specifications.
General
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPD02N50C3BTMA1 Datasheet
Download the complete datasheet for Infineon SPD02N50C3BTMA1 to view detailed technical specifications.
No datasheet is available for this part.