Infineon
SPD02N50C3BTMA1
Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
MountingSurface Mount
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Technical Specifications
Infineon SPD02N50C3BTMA1 technical specifications.
General
Continuous Drain Current (ID)
1.8A
Drain to Source Voltage (Vdss)
500V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Lead Free
Contains Lead
Max Dual Supply Voltage
500V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
RoHS Compliant
Yes
Turn-Off Delay Time
70ns
Turn-On Delay Time
10ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPD02N50C3BTMA1 Datasheet
Download the complete datasheet for Infineon SPD02N50C3BTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.