N-channel power MOSFET with 600V drain-source breakdown voltage and 1.8A continuous drain current. Features 3-ohm drain-source resistance (Rds On Max) and 25W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in TO-252AA (DPAK-3) for surface-mount applications. RoHS compliant and lead-free.
PackageTO-252-3
Voltage600V
Current18A
Current Rating1.8A
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Technical Specifications
Infineon SPD02N60C3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.8A
Current
18A
Current Rating
1.8A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
650V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
200pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
25W
Rds On Max
3R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
68ns
Turn-On Delay Time
6ns
Voltage
600V
DC Rated Voltage
650V
Compliance
RoHS
Compliant
Datasheet
Infineon SPD02N60C3 Datasheet
Download the complete datasheet for Infineon SPD02N60C3 to view detailed technical specifications.
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