N-channel power MOSFET featuring 600V drain-source breakdown voltage and 1.8A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 3-ohm drain-source resistance and 25W power dissipation. Designed for surface-mount applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-252AA (DPAK) plastic housing. Key electrical characteristics include a 20V maximum gate-to-source voltage and 4.5V threshold voltage.
PackageTO-252-3
Current Rating1.8A
PolarityN-CHANNEL
Power25W
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Technical Specifications
Infineon SPD02N60S5 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.8A
Current Rating
1.8A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
3R
Dual Supply Voltage
600V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
2.3mm
Input Capacitance
240pF
Lead Free
Lead Free
Length
6.5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Nominal Vgs
4.5V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
25W
Rds On Max
3R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
SMD/SMT
Threshold Voltage
4.5V
Turn-Off Delay Time
35ns
Turn-On Delay Time
35ns
DC Rated Voltage
600V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD02N60S5 Datasheet
Download the complete datasheet for Infineon SPD02N60S5 to view detailed technical specifications.
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