N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 3.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.4 ohm Rds On resistance and 38W maximum power dissipation. Designed for efficient switching, it exhibits a 10ns turn-on delay and 15ns fall time. Packaged in a TO-252AA (DPAK-3) plastic housing, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-252-3
Current Rating3.2A
PolarityN-CHANNEL
Power38W
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Technical Specifications
Infineon SPD03N50C3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
3.2A
Current Rating
3.2A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
1.4R
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
2.41mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
38W
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
38W
Rds On Max
1.4R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
70ns
Turn-On Delay Time
10ns
DC Rated Voltage
560V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD03N50C3 Datasheet
Download the complete datasheet for Infineon SPD03N50C3 to view detailed technical specifications.
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