N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 3.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.4 ohm drain-source resistance (Rds On Max) at a nominal Vgs of 4.5V. Designed for surface-mount applications, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 38W. Key switching characteristics include a turn-on delay time of 35ns and a fall time of 15ns. Packaged in a TO-252AA (DPAK-3) plastic package, this component is RoHS compliant.
PackageTO-252-3
Current Rating3.2A
PolarityN-CHANNEL
Power38W
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Technical Specifications
Infineon SPD03N60S5 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
3.2A
Current Rating
3.2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
600V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
420pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
38W
Nominal Vgs
4.5V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
38W
Rds On Max
1.4R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
SMD/SMT
Turn-Off Delay Time
40ns
Turn-On Delay Time
35ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Infineon SPD03N60S5 Datasheet
Download the complete datasheet for Infineon SPD03N60S5 to view detailed technical specifications.
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