Infineon
SPD03N60S5XT
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
MountingSurface Mount
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Technical Specifications
Infineon SPD03N60S5XT technical specifications.
General
Continuous Drain Current (ID)
3.2A
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Packaging
Cut Tape
Radiation Hardening
No
RoHS Compliant
No
Turn-Off Delay Time
40ns
Turn-On Delay Time
35ns
Compliance
RoHS
Not CompliantNo
Datasheet
Infineon SPD03N60S5XT Datasheet
Download the complete datasheet for Infineon SPD03N60S5XT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.