N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 4.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.95ohm drain-source resistance (Rds On Max) and 50W power dissipation. Designed for efficient switching, it exhibits turn-on delay time of 55ns and fall time of 15ns. Packaged in a TO-252AA (DPAK-3) surface-mount plastic package, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-252-3
Current Rating4.5A
PolarityN-CHANNEL
Power50W
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Technical Specifications
Infineon SPD04N60S5 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
4.5A
Current Rating
4.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
950mR
Drain to Source Voltage (Vdss)
600V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
580pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
50W
Radiation Hardening
No
Rds On Max
950mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
60ns
Turn-On Delay Time
55ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Infineon SPD04N60S5 Datasheet
Download the complete datasheet for Infineon SPD04N60S5 to view detailed technical specifications.
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