N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 4A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.3 ohm Rds On resistance and 63W power dissipation. Designed for efficient switching, it exhibits a 25ns turn-on delay and 12ns fall time. Packaged in a TO-252AA (DPAK-3) surface-mount plastic package, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-252-3
Voltage800V
Current4A
Current Rating4A
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Technical Specifications
Infineon SPD04N80C3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
4A
Current
4A
Current Rating
4A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.3R
Drain to Source Voltage (Vdss)
800V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
2.41mm
Input Capacitance
570pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
63W
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
63W
Rds On Max
1.3R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
72ns
Turn-On Delay Time
25ns
Voltage
800V
DC Rated Voltage
800V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD04N80C3 Datasheet
Download the complete datasheet for Infineon SPD04N80C3 to view detailed technical specifications.
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