Infineon
SPD04P10PGBTMA1
Power Field-Effect Transistor, 4A I(D), 100V, 1000ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, 3 PIN
PackageTO-252-3
MountingSurface Mount
Power38W
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Technical Specifications
Infineon SPD04P10PGBTMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
4A
Drain to Source Voltage (Vdss)
-100V
Fall Time
4.5ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Input Capacitance
319pF
Lead Free
Contains Lead
Max Dual Supply Voltage
-100V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
38W
Mount
Surface Mount
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
38W
Rds On Max
1R
RoHS Compliant
Yes
Series
SIPMOS®
Turn-Off Delay Time
14ns
Turn-On Delay Time
5.7ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPD04P10PGBTMA1 Datasheet
Download the complete datasheet for Infineon SPD04P10PGBTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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