Infineon
SPD04P10PLG
Power Field-Effect Transistor, 4.2A I(D), 100V, 0.85ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, 3 PIN
PackageTO-252-3
Quick Jump:
Technical Specifications
Infineon SPD04P10PLG technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
4.2A
Gate to Source Voltage (Vgs)
20V
Height
2.41mm
Input Capacitance
372pF
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
38W
Package Quantity
2500
Packaging
Tape and Reel
Rds On Max
850mR
RoHS Compliant
Yes
Series
SIPMOS®
Turn-Off Delay Time
18ns
Turn-On Delay Time
4.6ns
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD04P10PLG Datasheet
Download the complete datasheet for Infineon SPD04P10PLG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.