SPD04P10PLGBTMA1

P-channel MOSFET, 100V drain-source breakdown voltage, 4.2A continuous drain current, and 0.85 ohm on-state resistance. This silicon metal-oxide semiconductor FET features a TO-252-3 package for surface mounting, a maximum power dissipation of 38W, and an operating temperature range of -55°C to 175°C. Key electrical characteristics include a gate-source voltage of 20V, a threshold voltage of -1.5V, and input capacitance of 372pF. Switching performance is demonstrated by a 4.6ns turn-on delay and 18ns turn-off delay.