
N-channel Power MOSFET, 800V drain-source voltage, 6A continuous drain current, and 0.78 ohm Rds On. Features TO-252 (DPAK) surface mount package, 83W power dissipation, and 150°C max operating temperature. Includes 785pF input capacitance, 8ns fall time, and 25ns turn-on delay. RoHS compliant and halogen-free.
Infineon SPD06N80C3ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 785pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 83W |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPD06N80C3ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
