Infineon
SPD07N20
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-252, 3 PIN
PackageTO-252-3
Current Rating7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon SPD07N20 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
7A
Current Rating
7A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
200V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
530pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
40W
Rds On Max
400mR
RoHS Compliant
Yes
Series
SIPMOS®
Turn-Off Delay Time
55ns
DC Rated Voltage
200V
Compliance
RoHS
Compliant
Datasheet
Infineon SPD07N20 Datasheet
Download the complete datasheet for Infineon SPD07N20 to view detailed technical specifications.
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