Infineon
SPD07N60C3BTMA1
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, DPAK-3
PackageTO-252-3
MountingSurface Mount
Power83W
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Technical Specifications
Infineon SPD07N60C3BTMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
7.3A
Drain to Source Voltage (Vdss)
650V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
790pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Mount
Surface Mount
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
83W
Rds On Max
600mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
60ns
Turn-On Delay Time
6ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPD07N60C3BTMA1 Datasheet
Download the complete datasheet for Infineon SPD07N60C3BTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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