N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 7.3A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.6 ohm Rds On resistance and 83W maximum power dissipation. Designed for surface-mount applications with a TO-252AA package, it operates from -55°C to 150°C. Key electrical characteristics include 970pF input capacitance and a nominal Vgs of 4.5V.
PackageTO-252-3
Current Rating7.3A
PolarityN-CHANNEL
Power83W
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Technical Specifications
Infineon SPD07N60S5 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
7.3A
Current Rating
7.3A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
600V
Dual Supply Voltage
600V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Input Capacitance
970pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Nominal Vgs
4.5V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
83W
Rds On Max
600mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
CoolMOS™
Termination
SMD/SMT
Turn-Off Delay Time
170ns
DC Rated Voltage
650V
Compliance
RoHS
Compliant
Datasheet
Infineon SPD07N60S5 Datasheet
Download the complete datasheet for Infineon SPD07N60S5 to view detailed technical specifications.
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