N-Channel Power MOSFET, 500V Vds, 7.6A Continuous Drain Current, 600mΩ Rds On. This silicon metal-oxide semiconductor field-effect transistor features a TO-252 package for surface mounting, with a maximum power dissipation of 83W and an operating temperature range of -55°C to 150°C. Key switching characteristics include a 6ns turn-on delay and 7ns fall time.
PackageTO-252
MountingSurface Mount
PolarityN-CHANNEL
Power83W
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Technical Specifications
Infineon SPD08N50C3 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
7.6A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
500V
Dual Supply Voltage
560V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Height
2.41mm
Input Capacitance
750pF
Lead Free
Contains Lead
Length
6.73mm
Max Dual Supply Voltage
500V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Mount
Surface Mount
Nominal Vgs
3V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
83W
Radiation Hardening
No
Rds On Max
600mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
60ns
Turn-On Delay Time
6ns
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD08N50C3 Datasheet
Download the complete datasheet for Infineon SPD08N50C3 to view detailed technical specifications.
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