P-channel power MOSFET with 60V drain-source voltage and 8.83A continuous drain current. Features low on-resistance of 300mΩ at a nominal gate-source voltage of 20V. This surface-mount device, packaged in TO-252, offers a maximum power dissipation of 42W and operates across a temperature range of -55°C to 175°C. Includes 420pF input capacitance and fast switching times with 16ns turn-on and 48ns turn-off delays. RoHS compliant and designed for efficient power management applications.
PackageTO-252-3
Current Rating-8.8A
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon SPD08P06P technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
8.83A
Current Rating
-8.8A
Drain to Source Voltage (Vdss)
60V
Dual Supply Voltage
-60V
Gate to Source Voltage (Vgs)
20V
Height
2.3mm
Input Capacitance
420pF
Lead Free
Lead Free
Length
6.5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Nominal Vgs
20V
Packaging
Tape and Reel
Rds On Max
300mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SIPMOS®
Termination
SMD/SMT
Turn-Off Delay Time
48ns
Turn-On Delay Time
16ns
DC Rated Voltage
-60V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD08P06P Datasheet
Download the complete datasheet for Infineon SPD08P06P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
