Infineon
SPD08P06PG
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3 PIN
PackageTO-252-3
Current Rating-8.8A
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Technical Specifications
Infineon SPD08P06PG technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
8.83A
Current Rating
-8.8A
Drain to Source Voltage (Vdss)
60V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
2.41mm
Input Capacitance
420pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Package Quantity
2500
Packaging
Tape and Reel
Rds On Max
300mR
RoHS Compliant
Yes
Series
SIPMOS®
Turn-Off Delay Time
48ns
Turn-On Delay Time
16ns
DC Rated Voltage
-60V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD08P06PG Datasheet
Download the complete datasheet for Infineon SPD08P06PG to view detailed technical specifications.
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