Infineon
SPD09P06PLGBTMA1
Power Field-Effect Transistor, 9.7A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN
PackageTO-252-3
MountingSurface Mount
Power42W
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Technical Specifications
Infineon SPD09P06PLGBTMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
9.7A
Drain to Source Voltage (Vdss)
-60V
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Input Capacitance
450pF
Lead Free
Contains Lead
Max Dual Supply Voltage
-60V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
42W
Rds On Max
250mR
RoHS Compliant
Yes
Series
SIPMOS®
Compliance
RoHS
Compliant
Datasheet
Infineon SPD09P06PLGBTMA1 Datasheet
Download the complete datasheet for Infineon SPD09P06PLGBTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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