The SPD11N10 is a N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a maximum power dissipation of 50W and a maximum drain to source breakdown voltage of 100V. The device is packaged in a TO-252-3 package and is mounted using a surface mount technique. It is RoHS compliant and has a maximum current rating of 10.5A.
PackageTO-252-3
Current Rating10.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon SPD11N10 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 10.5A |
| Current Rating | 10.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 400pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 170mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 29ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPD11N10 Datasheet
Download the complete datasheet for Infineon SPD11N10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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