Infineon
SPD11N10
Power Field-Effect Transistor, 10.5A I(D), 100V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3
PackageTO-252-3
Current Rating10.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon SPD11N10 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
10.5A
Current Rating
10.5A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
400pF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
50W
Rds On Max
170mR
RoHS Compliant
Yes
Series
SIPMOS®
Turn-Off Delay Time
29ns
DC Rated Voltage
100V
Compliance
RoHS
Compliant
Datasheet
Infineon SPD11N10 Datasheet
Download the complete datasheet for Infineon SPD11N10 to view detailed technical specifications.
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