
P-channel MOSFET, 100V drain-source voltage, 15A continuous drain current, and 200mΩ Rds On. Features a 128W maximum power dissipation and operates from -55°C to 175°C. This surface-mount component, packaged in TO-252, offers fast switching with turn-on delay of 7.6ns and fall time of 29ns.
Infineon SPD15P10PLGBTMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | -100V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 1.49nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 128W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 128W |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 7.6ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPD15P10PLGBTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
