P-channel power MOSFET featuring 60V drain-source voltage and 18.6A continuous drain current. This surface-mount device offers a low 0.13-ohm Rds On resistance at a nominal 20V gate-source voltage. Operating across a wide temperature range of -55°C to 175°C, it supports up to 80W of power dissipation. The component is packaged in a TO-252-3 case with 3 pins and is RoHS compliant.
PackageTO-252-3
Current Rating-18.6A
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon SPD18P06P technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
18.6A
Current Rating
-18.6A
Drain to Source Voltage (Vdss)
60V
Dual Supply Voltage
-60V
Gate to Source Voltage (Vgs)
20V
Height
2.3mm
Input Capacitance
860pF
Lead Free
Lead Free
Length
6.5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Surface Mount
Nominal Vgs
20V
Packaging
Cut Tape
Rds On Max
130mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SIPMOS®
Termination
SMD/SMT
Threshold Voltage
20V
Turn-Off Delay Time
24.5ns
Turn-On Delay Time
12ns
DC Rated Voltage
-60V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD18P06P Datasheet
Download the complete datasheet for Infineon SPD18P06P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.