P-channel MOSFET, 60V drain-source voltage, 18.6A continuous drain current, and 0.13 ohm on-resistance. This single-element silicon power transistor features a TO-252 package for surface mounting. Operating across a wide temperature range from -55°C to 175°C, it offers fast switching with turn-on delay of 12ns and fall time of 11ns. Power dissipation capability reaches 80W.
PackageTO-252
MountingSurface Mount
Power80W
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Technical Specifications
Infineon SPD18P06PGBTMA1 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 18.6A |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 80W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 24.5ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPD18P06PGBTMA1 Datasheet
Download the complete datasheet for Infineon SPD18P06PGBTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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