Infineon
SPD30N03S2L-07
Power Field-Effect Transistor, 30A I(D), 30V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC, TO-252, 3 PIN
PackageTO-252-3
Current Rating30A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon SPD30N03S2L-07 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
30A
Current Rating
30A
Drain to Source Breakdown Voltage
30V
Drain to Source Voltage (Vdss)
30V
Fall Time
47ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.53nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
136W
Mount
Surface Mount
Package Quantity
1
Packaging
Cut Tape
Polarity
N-CHANNEL
Power Dissipation
136W
Rds On Max
6.7mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
62ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Infineon SPD30N03S2L-07 Datasheet
Download the complete datasheet for Infineon SPD30N03S2L-07 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.