Infineon
SPD30N03S2L-10
Power Field-Effect Transistor, 30A I(D), 30V, 0.0146ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power100W
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Technical Specifications
Infineon SPD30N03S2L-10 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
30A
Drain to Source Breakdown Voltage
30V
Drain to Source Voltage (Vdss)
30V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.55nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Surface Mount
Package Quantity
1
Packaging
Cut Tape
Polarity
N-CHANNEL
Power Dissipation
100W
Rds On Max
10mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
27ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPD30N03S2L-10 Datasheet
Download the complete datasheet for Infineon SPD30N03S2L-10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.