Infineon
SPD30N03S2L07GBTMA1
Power Field-Effect Transistor, 30A I(D), 30V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon SPD30N03S2L07GBTMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
30A
Drain to Source Voltage (Vdss)
30V
Fall Time
47ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.53nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
136W
Mount
Surface Mount
Packaging
Tape and Reel
Radiation Hardening
No
Rds On Max
6.7mR
RoHS Compliant
No
Series
OptiMOS™
Turn-Off Delay Time
62ns
Turn-On Delay Time
8ns
Compliance
RoHS
Not CompliantNo
Datasheet
Infineon SPD30N03S2L07GBTMA1 Datasheet
Download the complete datasheet for Infineon SPD30N03S2L07GBTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.