Infineon
SPD30P06P
Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3
PackageTO-252-3
Current Rating-30A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Infineon SPD30P06P technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
30A
Current Rating
-30A
Drain to Source Breakdown Voltage
-60V
Drain to Source Voltage (Vdss)
60V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.535nF
Lead Free
Contains Lead
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
125W
Rds On Max
75mR
RoHS Compliant
Yes
Series
SIPMOS®
Turn-Off Delay Time
30ns
DC Rated Voltage
-60V
Compliance
RoHS
Compliant
Datasheet
Infineon SPD30P06P Datasheet
Download the complete datasheet for Infineon SPD30P06P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.