Infineon
SPD35N10
Power Field-Effect Transistor, 35A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-252, 3 PIN
PackageTO-252-3
Current Rating35A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon SPD35N10 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
35A
Current Rating
35A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.57nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Package Quantity
1
Packaging
Cut Tape
Polarity
N-CHANNEL
Power Dissipation
150W
Rds On Max
44mR
RoHS Compliant
Yes
Series
SIPMOS®
Turn-Off Delay Time
39ns
DC Rated Voltage
100V
Compliance
RoHS
Compliant
Datasheet
Infineon SPD35N10 Datasheet
Download the complete datasheet for Infineon SPD35N10 to view detailed technical specifications.
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