Infineon
SPI07N65C3XKSA1
Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
PackageTO-262-3
Power83W
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Technical Specifications
Infineon SPI07N65C3XKSA1 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
7.3A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
650V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Lead Free
Lead Free
Max Dual Supply Voltage
650V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Packaging
Rail/Tube
Power Dissipation
83W
RoHS Compliant
Yes
Turn-Off Delay Time
60ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPI07N65C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPI07N65C3XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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